{"id":913,"date":"2019-05-10T09:48:15","date_gmt":"2019-05-10T09:48:15","guid":{"rendered":"http:\/\/www.trasferimentotecnologico.nano.cnr.it\/?page_id=913"},"modified":"2021-04-29T14:37:45","modified_gmt":"2021-04-29T14:37:45","slug":"random-access-memory-based-in-ferromagnetic-insulator-and-superconductor-heterojunctions-proximity-ram","status":"publish","type":"page","link":"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/random-access-memory-based-in-ferromagnetic-insulator-and-superconductor-heterojunctions-proximity-ram\/","title":{"rendered":"RANDOM ACCESS MEMORY BASED IN FERROMAGNETIC INSULATOR AND SUPERCONDUCTOR HETEROJUNCTIONS (PROXIMITY RAM)"},"content":{"rendered":"<div data-elementor-type=\"wp-post\" data-elementor-id=\"913\" class=\"elementor elementor-913\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-db4d1cd elementor-section-stretched elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"db4d1cd\" data-element_type=\"section\" data-settings=\"{&quot;stretch_section&quot;:&quot;section-stretched&quot;}\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-edfa231\" data-id=\"edfa231\" data-element_type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-c9d01bf elementor-widget elementor-widget-text-editor\" data-id=\"c9d01bf\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p><strong>RANDOM ACCESS MEMORY BASED IN FERROMAGNETIC INSULATOR AND SUPERCONDUCTOR HETEROJUNCTIONS (PROXIMITY RAM)<\/strong><\/p><p><em>The present invention consists of a device consisting of a matrix of random access memory cells (RAM) to be used for quantum and classical computers. Each cell consists of a FI-S-I-S-FI stack, where FI is a ferromagnetic insulator, S is a superconductor and I is a tunnel barrier. These devices exploit two combined physical effects: the magnetic proximity effect and the absolute spin valve effect.<\/em><\/p><p><em>Application number:\u00a0 IT 102017000107007<\/em><br \/>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 <br \/><em>PCT extension n. PCT\/EP2018\/072826<\/em><\/p><p><strong>YEAR:<\/strong>\u00a02018<\/p><p><strong>APPLICATIONS<\/strong><\/p><ul><li>The identification of reliable memory devices for superconducting computers. These emerging technologies require a drastic reduction in energy consumption and dissipated heat, which is one of the main limiting factors in current computing technologies.<\/li><li>Identification of simple structures compatible with production technologies. The structural complexity makes some of the currently available options invalid.<\/li><li>Improve the density of integration. Higher densities allow more memory to be available in the same space, increasing the overall computing performance.<\/li><\/ul><p><strong>INVENTORS<\/strong><\/p><ul><li>Francesco GIAZOTTO<\/li><li>Elia STRAMBINI<\/li><li>Giorgio DE SIMONI<\/li><li>Sebastian BERGERET<\/li><li><span style=\"font-size: 1rem;\">Babaro BERGERET<\/span><\/li><\/ul><p><strong>PATENT OWNERSHIP<\/strong><\/p><ul><li>National Research Council (Italy) (48%)<\/li><li>Spanish National Research Council (Spain) (42%)<\/li><li>University of the Basque Country (Spain) (10%)<\/li><\/ul><p><a href=\"https:\/\/brevetti.cnr.it\/InfoCatalogo.do?nsrif=10550&amp;dip=0\"><span style=\"text-decoration: underline;\"><em><strong>More information<\/strong><\/em><\/span><\/a><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>","protected":false},"excerpt":{"rendered":"<p>RANDOM ACCESS MEMORY BASED IN FERROMAGNETIC INSULATOR AND SUPERCONDUCTOR HETEROJUNCTIONS (PROXIMITY RAM) The present invention consists of a device consisting of a matrix of random access memory cells (RAM) to be used for quantum and classical computers. Each cell consists of a FI-S-I-S-FI stack, where FI is a ferromagnetic insulator, S is a superconductor and &hellip; <\/p>\n<p class=\"link-more\"><a href=\"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/random-access-memory-based-in-ferromagnetic-insulator-and-superconductor-heterojunctions-proximity-ram\/\" class=\"more-link\">Continue reading<span class=\"screen-reader-text\"> &#8220;RANDOM ACCESS MEMORY BASED IN FERROMAGNETIC INSULATOR AND SUPERCONDUCTOR HETEROJUNCTIONS (PROXIMITY RAM)&#8221;<\/span><\/a><\/p>","protected":false},"author":4,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-913","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/wp-json\/wp\/v2\/pages\/913","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/wp-json\/wp\/v2\/users\/4"}],"replies":[{"embeddable":true,"href":"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/wp-json\/wp\/v2\/comments?post=913"}],"version-history":[{"count":6,"href":"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/wp-json\/wp\/v2\/pages\/913\/revisions"}],"predecessor-version":[{"id":1809,"href":"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/wp-json\/wp\/v2\/pages\/913\/revisions\/1809"}],"wp:attachment":[{"href":"https:\/\/trasferimentotecnologico.nano.cnr.it\/en\/wp-json\/wp\/v2\/media?parent=913"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}