RANDOM ACCESS MEMORY BASED IN FERROMAGNETIC INSULATOR AND SUPERCONDUCTOR HETEROJUNCTIONS (PROXIMITY RAM)

The present invention consists of a device consisting of a matrix of random access memory cells (RAM) to be used for quantum and classical computers. Each cell consists of a FI-S-I-S-FI stack, where FI is a ferromagnetic insulator, S is a superconductor and I is a tunnel barrier. These devices exploit two combined physical effects: the magnetic proximity effect and the absolute spin valve effect.

Application number:  IT 102017000107007
                                           
PCT extension n. PCT/EP2018/072826

YEAR: 2018

APPLICATIONS

• The identification of reliable memory devices for superconducting computers. These emerging technologies require a drastic reduction in energy consumption and dissipated heat, which is one of the main limiting factors in current computing technologies.
• Identification of simple structures compatible with production technologies. The structural complexity makes some of the currently available options invalid.
• Improve the density of integration. Higher densities allow more memory to be available in the same space, increasing the overall computing performance.

INVENTORS

• Francesco GIAZOTTO
• Elia STRAMBINI
• Giorgio DE SIMONI
• Sebastian BERGERET
• Babaro BERGERET

PATENT OWNERSHIP

• National Research Council (Italy) (48%)
• Spanish National Research Council (Spain) (42%)
• University of the Basque Country (Spain) (10%)

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